IMPACT IONIZATION OF DEEP TRAPS IN SEMI-INSULATING GAAS SUBSTRATES

被引：32

作者：

LI, ZM ^{[1
]}

MCALISTER, SP ^{[1
]}

MCMULLAN, WG ^{[1
]}

HURD, CM ^{[1
]}

DAY, DJ ^{[1
]}

机构：

[1] VARIAN ASSOCIATES INC,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 12期

关键词：

D O I：

10.1063/1.344523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of the leakage current in the semi-insulating substrate of a GaAs device is more complicated than previously recognized. The voltage dependence of this current seen in a conventional voltage-controlled experiment has hysteresis, which arises from an S-type negative differential conductivity (S-NDC). This is incompatible with the conventional trap-fill-limited model, and we propose an alternative explanation based on the impact ionization of deep-level traps. We show how this simple model can account qualitatively for the S-NDC and the associated current instability, and how it can be extended when the deep traps are photoexcitable.

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页码：7368 / 7372

页数：5

相关论文

共 21 条

[1] ELECTRON-CAPTURE AND EMISSION FOR MIDGAP CENTERS [J].

BLAKEMORE, JS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (06) :627-631

[2] MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS [J].

CHANG, MF ;

LEE, CP ;

HOU, LD ;

VAHRENKAMP, RP ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :869-871

[3] INSTABILITY AND GATE VOLTAGE NOISE IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

DAY, DJ ;

TRUDEAU, M ;

MCALISTER, SP ;

HURD, CM .

CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) :238-241

[4]

FU ST, 1987, IEEE T ELECTRON DEV, V34, P1245

[5]

GORONKIN H, 1981, I PHYS C SER, V63, P287

[6] COMPUTER-AIDED ANALYSIS OF GAAS N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER [J].

HORIO, K ;

IKOMA, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1242-1250

[7] THE ROLES OF THE SURFACE AND BULK OF THE SEMI-INSULATING SUBSTRATE IN LOW-FREQUENCY ANOMALIES OF GAAS INTEGRATED-CIRCUITS [J].

MAKRAMEBEID, S ;

MINONDO, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :632-642

[8] IMPACT IONIZATION OF DEEP IMPURITIES (IN, NI, AU) IN SILICON [J].

MCCOMBS, AE ;

MILNES, AG .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1972, 32 (04) :361-&

[9] OBSERVATION OF ELECTRICAL BREAKDOWN AND NEGATIVE-RESISTANCE IN AN EPITAXIAL GAAS FILM OF A FIELD-EFFECT STRUCTURE [J].

MIMURA, T ;

FUKUTA, M ;

YOKOYAMA, N ;

ISHIKAWA, H .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :5111-5112

[10]

Ogawa M., 1987, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE70, P847