OBSERVATION OF ELECTRICAL BREAKDOWN AND NEGATIVE-RESISTANCE IN AN EPITAXIAL GAAS FILM OF A FIELD-EFFECT STRUCTURE

被引：4

作者：

MIMURA, T ^{[1
]}

FUKUTA, M ^{[1
]}

YOKOYAMA, N ^{[1
]}

ISHIKAWA, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,JAPAN

来源：

关键词：

D O I：

10.1063/1.322477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5111 / 5112

页数：2

共 4 条

[1] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE [J].

IHARA, M ;

DAZAI, K ;

RYUZAN, O .

[2] THE CRYOSAR - A NEW LOW-TEMPERATURE COMPUTER COMPONENT [J].

MCWHORTER, AL ;

REDIKER, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (07) :1207-1213

[3] DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE [J].

WILLIAMS, R .

[4] LOW-TEMPERATURE ELECTRICAL BREAKDOWN IN GERMANIUM [J].

YAMASHITA, J .