INTERDIFFUSION OF GAAS/GA1-XINXAS QUANTUM-WELLS

被引：14

作者：

TAYLOR, WJ

KUWATA, N

YOSHIDA, I

KATSUYAMA, T

HAYASHI, H

机构：

[1] DUKE UNIV,DEPT MECH ENGN & MAT SCI,DURHAM,NC 27708

[2] SUMITOMO ELECT IND,OPTOELECTR LABS,SAKAE KU,YOKOHAMA 244,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.353376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report results of an investigation of interdiffusion in GaAs/Ga0.82In0.18As strained single quantum wells. Wells of width 12-100 angstrom, grown by organometallic vapor phase epitaxy, were subjected to 10 s rapid thermal anneals of 830-950-degrees-C, and shifts in the electron-to-heavy-hole transition energies were detected by 4 K photoluminescence. We employed a powerful computer model to relate postdiffusion well shape to changes in photoluminescence energies, enabling estimation of diffusivity. Interdiffusion rates of 1 x 10(-16)-2 x 10(-14) cm2 /s and activation energies of 3.1-3.8 eV were obtained.

引用

收藏

页码：8653 / 8655

页数：3

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