QUALITATIVE AND QUANTITATIVE ASSESSMENTS OF THE GROWTH OF (AL,GA) AS-GAAS HETEROSTRUCTURES BY INSITU ELLIPSOMETRY

[1] ANDRE JP, 1981, I PHYS C SER, V56, P413

[2] [Anonymous], 1978, HETEROSTRUCTURE LASE

[3] Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799

[4] HIGH PRECISION SCANNING ELLIPSOMETER [J]. APPLIED OPTICS, 1975, 14 (01): : 220 - 228

[5] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[6] BARTELS WJ, 1979, I PHYS C SER, V45, P229

[7] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[8] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1141 - 1147

[9] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[10] COURDILLE M, 1980, Patent No. 8020838

[1] ANDRE JP, 1981, I PHYS C SER, V56, P413

[2] [Anonymous], 1978, HETEROSTRUCTURE LASE

[3] Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799

[4] HIGH PRECISION SCANNING ELLIPSOMETER [J]. APPLIED OPTICS, 1975, 14 (01): : 220 - 228

[5] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[6] BARTELS WJ, 1979, I PHYS C SER, V45, P229

[7] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[8] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1141 - 1147

[9] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[10] COURDILLE M, 1980, Patent No. 8020838