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ELECTRICAL-PROPERTIES OF A-GAAS/C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES

被引：3
作者：
AGUIR, K
FENNOUH, A
CARCHANO, H
LOLLMAN, D
机构：
来源：
JOURNAL DE PHYSIQUE III | 1995年 / 5卷 / 10期
关键词：
D O I：
10.1051/jp3:1995211
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heterojunctions were fabricated by deposit of amorphous GaAs and GaAsN on c-GaAs. I(V) and C(V) measurements were performed to determine electrical properties of these structures. The a-GaAs/c-GaAs(n) heterojunctions present a p-n junction like behaviour. The characteristics of the a-GaAsN/c-GaAs(n) heterojunctions present a MIS Like structure behaviour with some imperfections. A fixed positive charge was detected and a density of interface states of about 10(11) eV(-1)cm(-2) was evaluated.
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页码：1573 / 1585
页数：13
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