STOICHIOMETRIC STUDY ON POLYCRYSTALLINE ASGA THIN-FILMS DEPOSITED BY RF-SPUTTERING

被引:4
作者
CARCHANO, H
LALANDE, F
LOUSSIER, R
机构
关键词
D O I
10.1016/0040-6090(84)90172-X
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:47 / 54
页数:8
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共 17 条
[1]   STUDY OF THE CRYSTALLINE-STRUCTURE AND OF THE COMPOSITION OF PULVERIZED GALLIUM-ARSENIDE, WITH OR WITHOUT LASER ANNEALING [J].
ALIMOUSSA, L ;
CARCHANO, H ;
FASSIFIHRI, A ;
LALANDE, F ;
LOUSSIER, R .
JOURNAL DE PHYSIQUE, 1982, 43 (NC1) :341-346
[2]  
BARANSKI P, 1978, ELECTRONIQUE SEMICON, P7
[3]  
DELABRETEQUE P, 1980, ENCY CHEM TECHNOLOGY, V2
[4]  
DEMEO AE, 1975, WORKSHOP CADMIUM SUL, P109
[5]  
Fan J. C. C., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P666
[6]  
FRANCOMBE MH, 1963, 10 T NAT VAC S, P316
[7]  
HOVEL HJ, 1975, SEMICONDUCTORS SEMIM, V11, P218
[8]   EFFICIENCY CALCULATIONS FOR THIN-FILM POLYCRYSTALLINE SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS [J].
LANZA, C ;
HOVEL, HJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :392-396
[10]   USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].
MANASEVIT, HM ;
SIMPSON, WI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1725-+