DOPING SUPERLATTICES (N-I-P-I CRYSTALS)

被引:173
作者
DOHLER, GH
机构
关键词
D O I
10.1109/JQE.1986.1073179
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1682 / 1695
页数:14
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    ABSTREITER, G
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    [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 456 - 459
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    ZELLER, C
    VINTER, B
    ABSTREITER, G
    PLOOG, K
    [J]. PHYSICA B & C, 1983, 117 (MAR): : 729 - 731
  • [63] QUASI-2-DIMENSIONAL PHOTO-EXCITED CARRIERS IN GAAS DOPING SUPER-LATTICES
    ZELLER, C
    VINTER, B
    ABSTREITER, G
    PLOOG, K
    [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 2124 - 2132
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