QUANTIZATION OF PHOTO-EXCITED CARRIERS IN GAAS DOPING SUPER-LATTICES

被引：8

作者：

ZELLER, C ^{[1
]}

VINTER, B ^{[1
]}

ABSTREITER, G ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90636-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：729 / 731

页数：3

共 8 条

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[3] OBSERVATION OF TUNABLE BAND-GAP AND TWO-DIMENSIONAL SUBBANDS IN A NOVEL GAAS SUPER-LATTICE [J].

DOHLER, GH ;

KUNZEL, H ;

OLEGO, D ;

PLOOG, K ;

RUDEN, P ;

STOLZ, HJ ;

ABSTREITER, G .

PHYSICAL REVIEW LETTERS, 1981, 47 (12) :864-867

[4] DOPING SUPER-LATTICES [J].

DOHLER, GH .

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[5] ELECTRICAL AND OPTICAL PROPERTIES OF CRYSTALS WITH NIPI-SUPERSTRUCTURE [J].

DOHLER, GH .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (02) :533-&

[6] THE USE OF SI AND BE IMPURITIES FOR NOVEL PERIODIC DOPING STRUCTURES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PLOOG, K ;

FISCHER, A ;

KUNZEL, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) :400-410

[7]

RUDEN P, UNPUB PHYS REV B

[8]

ZELLER C, PHYS REV B

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