TUNNELING IN METAL-GLASS-SILICON STRUCTURES

被引:4
作者
LAIBOWIT.RB
机构
[1] IBM Research Center, Yorktown Heights
关键词
D O I
10.1063/1.1652579
中图分类号
O59 [应用物理学];
学科分类号
摘要
Low-temperature conductance peaks have been observed in tunneling measurements on aluminum-phosphosilicate glass-degenerate silicon sandwich structures. In magnetic fields up to 84 kOe these peaks split and, with certain assumptions, the g value for the impurity responsible for the peak is found to be 2.1 ± 0.1. © 1968 The American Institute of Physics.
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页码:221 / &
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