THEORETICAL-ANALYSIS OF A NOVEL MPN GALLIUM-ARSENIDE SCHOTTKY-BARRIER SOLAR-CELL

被引：16

作者：

LI, SS

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90274-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：435 / 438

页数：4

共 18 条

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[8] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J].

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[9]

FONASH SJ, 1975, 11TH P PHOT VOLT SPE

[10] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

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