STRUCTURAL-PROPERTIES OF LIQUID AND AMORPHOUS GAAS BY TIGHT-BINDING MOLECULAR-DYNAMICS

被引:31
作者
MOLTENI, C
COLOMBO, L
MIGLIO, L
机构
[1] Dipartimento di Fisica, Università di Milano, Milano, 20133
来源
EUROPHYSICS LETTERS | 1993年 / 24卷 / 08期
关键词
D O I
10.1209/0295-5075/24/8/007
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the first tight-binding molecular-dynamics investigation on liquid GaAs where a very good agreement with experimental data and ab initio results is obtained. The critical choice of the repulsive potential and the role played by charge transfer are discussed. By exploiting the reduced computational workload of our method, we extend our study to amorphous GaAs as obtained by quenching from the melt and investigate the stability of the amorphous network against slow-interdiffusion dynamics.
引用
收藏
页码:659 / 664
页数:6
相关论文
共 24 条
[1]  
[Anonymous], ELECTRONIC STRUCTURE
[2]   STRUCTURE OF BINARY LIQUID MIXTURES .I. [J].
ASHCROFT, NW ;
LANGRETH, DC .
PHYSICAL REVIEW, 1967, 156 (03) :685-&
[3]  
BERGMAN C, 1986, J PHYS-PARIS, V46, P97
[4]   THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1984, 29 (02) :785-792
[5]  
COLOMBO L, 1993, MATER RES SOC SYMP P, V291, P61
[6]  
DEGIRONCOLI S, COMMUNICATION
[7]   STRUCTURE, ELECTRONIC-PROPERTIES, AND DEFECTS OF AMORPHOUS GALLIUM-ARSENIDE [J].
FOIS, E ;
SELLONI, A ;
PASTORE, G ;
ZHANG, QM ;
CAR, R .
PHYSICAL REVIEW B, 1992, 45 (23) :13378-13382
[8]   STRUCTURAL-PROPERTIES OF III-V ZINCBLENDE SEMICONDUCTORS UNDER PRESSURE [J].
FROYEN, S ;
COHEN, ML .
PHYSICAL REVIEW B, 1983, 28 (06) :3258-3265
[9]   GENERATING TRANSFERABLE TIGHT-BINDING PARAMETERS - APPLICATION TO SILICON [J].
GOODWIN, L ;
SKINNER, AJ ;
PETTIFOR, DG .
EUROPHYSICS LETTERS, 1989, 9 (07) :701-706
[10]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF MOLTEN GAAS [J].
HAFNER, J ;
JANK, W .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (26) :4235-4243