NONCONTACT CHARACTERIZATION FOR CARRIER RECOMBINATION CENTER RELATED TO SI-SIO2 INTERFACE

被引：9

作者：

KATAYAMA, K ^{[1
]}

SHIMURA, F ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3B期

关键词：

CARRIER LIFETIME; NONCONTACT CHARACTERIZATION; LASER MICROWAVE PHOTOCONDUCTANCE TECHNIQUE; CARRIER RECOMBINATION CENTERS; SILICON WAFER SURFACES; SI-SIO2; INTERFACE;

D O I：

10.1143/JJAP.32.L395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy levels of carrier recombination centers originating from an Si-SiO2 interface were investigated for the first time by means of a noncontact and nondestructive laser/microwave photoconductance technique. An energy level of the carrier recombination center around 0.2 eV, which can be attributed to a trivalent silicon defect, i.e., the P(b0) center, was obtained from the temperature dependence of the Shockley-Read-Hall lifetime for (100) silicon wafers with native or thermal oxide.

引用

页码：L395 / L397

页数：3

共 12 条

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