IMPROVED UNIFORMITY OF EPITAXIAL INDIUM-BASED COMPOUNDS BY ATOMIC LAYER EPITAXY

被引：26

作者：

TISCHLER, MA

BEDAIR, SM

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.97139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：274 / 276

页数：3

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