GROWTH OF SILICON MICROCRYSTALS IN THIN SURFACE-LAYERS OF QUARTZ GLASS WITH VACUUM-ULTRAVIOLET LASER PROCESSING

被引：6

作者：

KUROSAWA, K

SASAKI, W

TAKIGAWA, Y

OHMUKAI, M

KATTO, M

OKUDA, M

机构：

[1] UNIV OSAKA PREFECTURE,DEPT ELECTR,SAKAI 593,JAPAN

[2] OSAKA ELECTROCOMMUN UNIV,DEPT SOLID STATE ELECTR,NEYAGAWA,OSAKA 572,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷 / 1 -4 pt B期

关键词：

D O I：

10.1016/0169-4332(93)90607-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon precipitates in surface layers as thin as 50 nm of quartz glass plates where 9.8 eV photons from an argon excimer laser are irradiated, The surfaces have many protrusions having a spherical shape with submicrometer diameter. Raman spectra indicates that they are made of crystalline silicon. Such a phenomenon has not been observed by 8.5 eV photons from a krypton excimer laser. VUV laser material processing offers a novel way to produce directly polycrystalline silicon circuits in thin surface layers of quartz glass plates.

引用

页码：712 / 715

页数：4

共 9 条

[1] ELECTRONIC EXCITATION MECHANISM OF SPUTTERING AND TRACK FORMATION BY ENERGETIC IONS IN THE ELECTRONIC STOPPING REGIME [J].