SECONDARY-ELECTRON LINE SCANS OVER HIGH-RESOLUTION RESIST IMAGES - THEORETICAL AND EXPERIMENTAL INVESTIGATION OF INDUCED LOCAL ELECTRICAL-FIELD EFFECTS

被引：12

作者：

GRELLA, L ^{[1
]}

DIFABRIZIO, E ^{[1
]}

GENTILI, M ^{[1
]}

BACIOCCHI, M ^{[1
]}

MASTROGIACOMO, L ^{[1
]}

MAGGIORA, R ^{[1
]}

CAPODICCI, L ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR XRAY LITHOG,STOUGHTON,WI

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3555 / 3560

页数：6

共 10 条

[1] CRITICAL DIMENSION CONTROL OF HIGH-RESOLUTION METAL STRUCTURES BY BACKSCATTERED ELECTRONS [J].

DIFABRIZIO, E ;

LUCIANI, L ;

GRELLA, L ;

BACIOCCHI, M ;

MASTROGIACOMO, L ;

GENTILI, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (03) :1187-1192

[2] ANALYTICAL DESCRIPTION OF BACKSCATTERED ELECTRON SIGNAL FOR HIGH-RESOLUTION METROLOGY [J].

DIFABRIZIO, E ;

LUCIANI, L ;

GRELLA, L ;

BACIOCCHI, M ;

GENTILI, M ;

MASTROGIACOMO, L ;

MAGGIORA, R ;

WHITE, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2643-2647

[3]

DIFABRIZIO E, 1993, J VAC SCI TECHNOL B, V11, P2462

[4]

HANSEN GH, 1987, J VAC SCI TECHNOL B, V5, P146

[5] LOW-VOLTAGE BACKSCATTERED ELECTRON COLLECTION FOR PACKAGE SUBSTRATES AND INTEGRATED-CIRCUIT INSPECTION [J].

LEE, KL ;

WARD, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3590-3596

[6]

LEVY D, 1988, P SOC PHOTO-OPT INS, V921, P3

[7]

NADLERNIV I, 1988, P SOC PHOTO-OPT INS, V921, P3

[8] LOW ACCELERATING VOLTAGE SEM IMAGING AND METROLOGY USING BACKSCATTERED ELECTRONS [J].

POSTEK, MT .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1990, 61 (12) :3750-3754

[9] SECONDARY-ELECTRON EMISSION IN THE SCANNING ELECTRON-MICROSCOPE [J].

SEILER, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :R1-R18

[10]

1993, ELECTRON BEAM TESTIN

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