MONTE-CARLO STUDIES OF OHMIC HOLE MOBILITY IN SILICON AND GERMANIUM - EXAMINATION OF THE OPTICAL PHONON DEFORMATION POTENTIAL

Monte Carlo methods which have been widely used for studying high field electron and hole transport, so far have not been applied to the complex problem of Ohmic hole transport. We present a versatile generalization of the Monte Carlo approach for Ohmic hole mobility studies and apply it to pure silicon and germanium. In particular, we examine the role of the optical phonon deformation potential d0 in controlling the temperature dependence of the mobility.