ANGULAR-DEPENDENCE OF HOLE ACOUSTIC-PHONON TRANSITION RATES IN SILICON

被引：10

作者：

SZMULOWICZ, F

MADARASZ, FL

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.26.2101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2101 / 2112

页数：12

共 25 条

[1] LATTICE HARMONICS .I. CUBIC GROUPS [J].

ALTMANN, SL ;

CRACKNELL, AP .

REVIEWS OF MODERN PHYSICS, 1965, 37 (01) :19-+

[2] ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON [J].

ASCHE, M ;

VONBORZE.J .

PHYSICA STATUS SOLIDI, 1970, 37 (01) :433-&

[3] ACOUSTIC SCATTERING IN A 2-BAND SYSTEM AND ITS APPLICATION TO HOLE TRANSPORT PROPERTIES IN CUBIC SEMICONDUCTORS [J].

BOSI, S ;

JACOBONI, C ;

REGGIANI, L .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (08) :1525-1531

[4]

BYRON FW, 1969, MATH CLASSICAL QUANT, P130

[5] SCATTERING PROBABILITIES FOR HOLES .1. DEFORMATION POTENTIAL AND IONIZED IMPURITY SCATTERING MECHANISMS [J].

COSTATO, M ;

REGGIANI, L .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 58 (02) :471-482

[6] ELECTRON-ENERGY RELAXATION-TIME IN SI AND GE [J].

COSTATO, M ;

FONTANESI, S ;

REGGIANI, L .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) :547-564

[7] OHMIC HOLE MOBILITY IN CUBIC SEMICONDUCTORS [J].

COSTATO, M ;

GAGLIANI, G ;

JACOBONI, C ;

REGGIANI, L .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (12) :1605-1614

[8] NONPARABOLICITY AND INTRINSIC CARRIER CONCENTRATION IN SI AND GE [J].

GAGLIANI, G ;

REGGIANI, L .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1975, 30 (02) :207-216

[9] DETERMINATION OF CARRIER DENSITIES IN LIGHTLY DOPED SILICON-CRYSTALS FROM THE HALL-EFFECT [J].

HACKMANN, A ;

NEUBERT, D ;

SCHERZ, U ;

SCHLIEF, R .

PHYSICAL REVIEW B, 1981, 24 (08) :4666-4683

[10] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

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