CHARACTERIZATION OF DEFECTS IN BORON-IMPLANTED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS BY ELECTRON-PARAMAGNETIC-RESONANCE AND CATHODOLUMINESCENCE

被引:21
作者
GHEERAERT, E [1 ]
FONTAINE, F [1 ]
DENEUVILLE, A [1 ]
KHONG, YL [1 ]
COLLINS, AT [1 ]
机构
[1] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND
关键词
D O I
10.1016/0925-9635(94)90260-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The same electron paramagnetic resonance active defects (C interactive dangling bonds), with similar behaviour with respect to B dose before (20 centres per B ion, amorphization threshold of 10(15) cm-2) and after annealing at 800-degrees-C (concentration reduced by 95%), are created by B implantation in chemically vapour deposited polycrystalline films and type Ha natural crystals of diamond. A broad 2.4 eV cathodoluminescence band (substitutional B), appears only in polycrystalline films. Its intensity relative to the 2.92 eV band increases with the B dose and decreases after annealing.
引用
收藏
页码:737 / 740
页数:4
相关论文
共 13 条
[1]   ELECTRON-SPIN-RESONANCE INVESTIGATION OF ION-BEAM MODIFIED AMORPHOUS HYDROGENATED (DIAMOND-LIKE) CARBON [J].
ADEL, ME ;
KALISH, R ;
PRAWER, S .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4096-4099
[2]   EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION-IMPLANTATION [J].
BRAUNSTEIN, G ;
KALISH, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2106-2108
[3]  
BROSIOUS PR, 1974, PHYS STATUS SOLIDI A, V21, P677, DOI 10.1002/pssa.2210210233
[4]   THE CHARACTERIZATION OF POINT-DEFECTS IN DIAMOND BY LUMINESCENCE SPECTROSCOPY [J].
COLLINS, AT .
DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) :457-469
[5]   THE INFLUENCE OF OXYGEN, IN GAS-MIXTURES AND VARIOUS SUBSTRATE POSITIONS, ON THE BROAD CATHODOLUMINESCENCE BANDS OF MPCVD DIAMOND FILMS [J].
DENEUVILLE, A ;
GONON, P ;
GHEERAERT, E ;
COLLINS, AT ;
KHONG, YL .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :737-741
[6]   REALITY OF DOPING BY BORON IMPLANTATION OF CVD POLYCRYSTALLINE DIAMOND FROM A COMPARISON OF RAMAN AND ELECTRICAL MEASUREMENTS [J].
FONTAINE, F ;
DENEUVILLE, A ;
GHEERAERT, E ;
GONON, P ;
ABELLO, L ;
LUCAZEAU, G .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :623-627
[7]   DEFECTS PRODUCTION AND INTERACTION IN ION-IMPLANTED DIAMOND [J].
GIPPIUS, AA ;
VAVILOV, VS ;
ZAITSEV, AM ;
ZHAKUPBEKOV, BS .
PHYSICA B & C, 1983, 116 (1-3) :187-194
[8]   ION-BEAM MODIFICATION OF DIAMOND [J].
KALISH, R .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :621-633
[9]   STUDY OF DEFECTS INTRODUCED BY ION-IMPLANTATION IN DIAMOND [J].
MORHANGE, JF ;
BESERMAN, R ;
BOURGOIN, JC .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) :544-548
[10]   ON THE BAND-A EMISSION AND BORON RELATED LUMINESCENCE IN DIAMOND [J].
RUAN, J ;
KOBASHI, K ;
CHOYKE, WJ .
APPLIED PHYSICS LETTERS, 1992, 60 (25) :3138-3140