REALITY OF DOPING BY BORON IMPLANTATION OF CVD POLYCRYSTALLINE DIAMOND FROM A COMPARISON OF RAMAN AND ELECTRICAL MEASUREMENTS

被引：18

作者：

FONTAINE, F ^{[1
]}

DENEUVILLE, A ^{[1
]}

GHEERAERT, E ^{[1
]}

GONON, P ^{[1
]}

ABELLO, L ^{[1
]}

LUCAZEAU, G ^{[1
]}

机构：

[1] ENSEEG, ION & ELECTROCHIM SOLIDE LAB, F-38402 GRENOBLE, FRANCE

来源：

关键词：

D O I：

10.1016/0925-9635(94)90237-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effectiveness of doping in polycrystalline CVD diamond by 10(13)-10(16) cm-2 boron implantation at 77 K followed by annealing at 800-degrees-C has been studied by Raman scattering and I(V, T) measurements. The amorphization threshold is found to be located around a boron doping of 3 x 10(15) cm-2. Subsequent annealing of samples implanted with boron doses below and above this threshold results respectively in doped semiconducting diamond and graphite. In the high temperature range, the activation energies (between 0.61 and 0.15 eV) are discussed assuming a highly compensated semiconductor behaviour. In part of the low temperature range, hopping conduction occurs. The compensating centres are suggested to originate from native as well as implantation-induced defects.

引用

页码：623 / 627

页数：5

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