THERMAL-OXIDATION OF GAAS

被引：34

作者：

BUTCHER, DN

SEALY, BJ

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1978年 / 11卷 / 10期

关键词：

D O I：

10.1088/0022-3727/11/10/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1451 / 1456

页数：6

共 11 条

[1]

BULL C, UNPUBLISHED

[2] ELECTRICAL-PROPERTIES OF THERMAL OXIDES ON GAAS [J].

BUTCHER, DN ;

SEALY, BJ .

ELECTRONICS LETTERS, 1977, 13 (19) :558-559

[3] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569

[4] THERMAL-OXIDATION OF GAAS [J].

KOSHIGA, F ;

SUGANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :465-469

[5] THERMAL OXIDATION OF GAAS [J].

MINDEN, HT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) :733-733

[6] THERMAL OXIDATION OF GAAS [J].

MURARKA, SP .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :180-181

[7] THERMAL OXIDATION OF GALLIUM ARSENIDE [J].

NAVRATIL, K .

CZECHOSLOVAK JOURNAL OF PHYSICS, 1968, 18 (02) :266-&

[8]

Schwartz B., 1975, Critical Reviews in Solid State Sciences, V5, P609, DOI 10.1080/10408437508243518

[9]

SEALY BJ, 1974, THIN SOLID FILMS, V22, P539

[10] AUGER ANALYSIS OF THERMALLY OXIDIZED GAAS SURFACES [J].

SHIOTA, I ;

MIYAMOTO, N ;

NISHIZAWA, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1405-1409

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