FUNDAMENTALS OF CHEMICAL VAPOR-DEPOSITION

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &

[2] CHEMICAL VAPOR-DEPOSITION OF PYRO-CARBON, SIC, TIC, TIN, SI AND TA ON DIFFERENT TYPES OF CARBON-FIBERS [J]. CARBON, 1974, 12 (03) : 358 - 362

[3] ALEKSANDROV LN, 1972, 3RD INT C CHEM VAP D, V3, P453

[4] ANDREWS RW, 1969, SOLID STATE TECHNOL, V12, P61

[5] GRAIN-GROWTH OF CHEMICAL VAPOR-DEPOSITED TUNGSTEN-22 WT PERCENT RHENIUM ALLOY [J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (04) : 559 - 564

[6] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4 [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289

[7] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1473 - &

[8] PYROLYTIC DEPOSITION OF SILICON DIOXIDE FOR 600-DEGREES-C THIN FILM CAPACITORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 361 - 362

[9] PYROLYTIC-CARBON COATINGS ON CERAMIC FUEL PARTICLES [J]. NUCLEAR APPLICATIONS, 1965, 1 (06): : 560 - &

[10] BELYAYEV AI, 1968, RUSS METALL-METALL-U, P38

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &

[2] CHEMICAL VAPOR-DEPOSITION OF PYRO-CARBON, SIC, TIC, TIN, SI AND TA ON DIFFERENT TYPES OF CARBON-FIBERS [J]. CARBON, 1974, 12 (03) : 358 - 362

[3] ALEKSANDROV LN, 1972, 3RD INT C CHEM VAP D, V3, P453

[4] ANDREWS RW, 1969, SOLID STATE TECHNOL, V12, P61

[5] GRAIN-GROWTH OF CHEMICAL VAPOR-DEPOSITED TUNGSTEN-22 WT PERCENT RHENIUM ALLOY [J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (04) : 559 - 564

[6] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4 [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289

[7] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1473 - &

[8] PYROLYTIC DEPOSITION OF SILICON DIOXIDE FOR 600-DEGREES-C THIN FILM CAPACITORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 361 - 362

[9] PYROLYTIC-CARBON COATINGS ON CERAMIC FUEL PARTICLES [J]. NUCLEAR APPLICATIONS, 1965, 1 (06): : 560 - &

[10] BELYAYEV AI, 1968, RUSS METALL-METALL-U, P38