ELECTRON TUNNELING INTO AMORPHOUS GERMANIUM

被引：32

作者：

OSMUN, JW

FRITZSCH.H

机构：

来源：

关键词：

D O I：

10.1063/1.1653131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：87 / &

共 10 条

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[2] ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM
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[3] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS
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FRITZSCHE, H
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +
[4] GRIGOROVICI R, 1969, PHYS STATUS SOLIDI, V16, pK143
[5] Jonscher AK., 1967, THIN SOLID FILMS, V1, P367, DOI [10.1016/0040-6090(68)90026-6, DOI 10.1016/0040-6090(68)90026-6]
[6] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &
[7] ELECTRONS IN DISORDERED STRUCTURES
MOTT, NF
[J]. ADVANCES IN PHYSICS, 1967, 16 (61) : 49 - +
[8] TUNNELING INTO AMORPHOUS GERMANIUM FILMS
NWACHUKU, A
KUHN, M
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (05) : 163 - &
[9] OSMUN JW, 1969, B AM PHYS SOC, V14, P413
[10] OVSYUK VN, 1966, SOVIET PHYS SEMICOND, V3, P250