ENHANCEMENT IN THERMAL-OXIDATION OF SILICON BY OZONE

被引：27

作者：

CHAO, SC

PITCHAI, R

LEE, YH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 09期

关键词：

D O I：

10.1149/1.2097584

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2751 / 2752

页数：2

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