EFFECT OF HIGH-TEMPERATURE PROCESSING OF SI/SIO2/SI STRUCTURES ON THEIR RESPONSE TO X-RAY-IRRADIATION

被引：8

作者：

PAILLET, P ^{[1
]}

HERVE, D ^{[1
]}

LERAY, JL ^{[1
]}

DEVINE, RAB ^{[1
]}

机构：

[1] CNET,FRANCE TELECOM,F-38243 MEYLAN,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The radiation response of S/SiO2/Si structures subjected to x-ray irradiation in the presence and absence of applied electric field has been studied as a function of accumulated dose. High temperature annealing of sandwiches involving thermally grown oxide results in a softening of the radiation response, evidence for both hole and electron trapping is found. Similar behavior is found in buried oxide, layers produced by O+ implantation, then subjected to high temperature annealing. Evidence for majority hole trapping is found in unannealed, thermal oxide. It is suggested that high temperature annealing results in a reduction of the oxide which is driven by the Si/SiO2 interface, resulting in electron and hole trap generation.

引用

页码：2088 / 2090

页数：3

共 13 条

[1] ULTRAVIOLET-RADIATION INDUCED DEFECT CREATION IN BURIED SIO2 LAYERS [J].