APPLIED FIELD AND TOTAL DOSE DEPENDENCE OF TRAPPED CHARGE BUILDUP IN MOS DEVICES

被引：70

作者：

KRANTZ, RJ

AUKERMAN, LW

ZIETLOW, TC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1196 / 1201

页数：6

共 26 条

[1]

AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533

[2] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].

AITKEN, JM ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1196-1198

[3] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J].

AITKEN, JM ;

YOUNG, DR ;

PAN, K .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3386-3391

[4]

AITKEN JM, 1977, IEEE T NUCL SCI, V24, P2138

[5] HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING [J].

BENEDETTO, JM ;

BOESCH, HE ;

MCLEAN, FB ;

MIZE, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3916-3920

[6]

Boesch H.E, 1986, IEEE T NUCL SCI, VNS-33

[7] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J].

BOESCH, HE ;

MCLEAN, FB ;

MCGARRITY, JM ;

AUSMAN, GA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2163-2167

[8] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J].

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1520-1525

[9] HOLE TRANSPORT AND TRAPPING IN FIELD OXIDES [J].

BOESCH, HE ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3940-3945

[10]

DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

← 1 2 3 →