APPLICATION OF 2-DIMENSIONAL SOLUTIONS OF SHOCKLEY-POISSON EQUATION TO INVERSION-LAYER MOST DEVICES

被引：25

作者：

LOEB, HW

ANDREW, R

LOVE, W

机构：

[1] College of Aeronautics, Cranfield, Beds

来源：

ELECTRONICS LETTERS | 1968年 / 4卷 / 17期

关键词：

D O I：

10.1049/el:19680277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for inversion-layer m.o.s.ts is outlined which avoids the usual gradual-channel approximation by the use of 2-dimensional solutions to the Shockley-Poisson and Laplace equations governing the field distribution. Computed I/V and C/V characteristics and potential-distribution diagrams are shown for a particular device geometry. © 1968, The Institution of Electrical Engineers. All rights reserved.

引用

页码：352 / &