THEORETICAL-STUDIES OF SI(111) SURFACE-STRUCTURES

被引：16

作者：

CHADI, DJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：856 / 859

页数：4

共 48 条

[1] OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES [J].

ASSMANN, J ;

MONCH, W .

SURFACE SCIENCE, 1980, 99 (01) :34-44

[2]

CASULA F, UNPUBLISHED

[3] ATOMIC-STRUCTURE OF SI(111) SURFACES [J].

CHADI, DJ .

SURFACE SCIENCE, 1980, 99 (01) :1-12

[4] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE [J].

CHADI, DJ ;

BAUER, RS ;

WILLIAMS, RH ;

HANSSON, GV ;

BACHRACH, RZ ;

MIKKELSEN, JC ;

HOUZAY, F ;

GUICHAR, GM ;

PINCHAUX, R ;

PETROFF, Y .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :799-802

[5] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065

[6]

CHIARADIA P, 1978, SOLID STATE COMMUN, V26, P513

[7] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].

CHIAROTTI, G ;

NANNARONE, S ;

PASTORE, R ;

CHIARADIA, P .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3398-+

[8] DETERMINATION OF SURFACE-STATES ON SI(111) BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J].

CLABES, J ;

HENZLER, M .

PHYSICAL REVIEW B, 1980, 21 (02) :625-631

[9] QUANTUM PHOTOYIELD OF DIAMOND (111) - A STABLE NEGATIVE-AFFINITY EMITTER - COMMENT [J].

COHEN, ML .

PHYSICAL REVIEW B, 1980, 22 (02) :1095-1095

[10]

COHEN ML, 1980, 15 P INT C PHYS SEM

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