PHOTOREFRACTIVE WAVE MIXING IN UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GAAS AT 1.5 MU-M - VALIDATION OF PHOTOREFRACTIVE MODELING

被引：13

作者：

DELAYE, P

DEMONTMORILLON, LA

VONBARDELEBEN, HJ

ROOSEN, G

机构：

[1] UNIV PARIS 07,F-75221 PARIS 05,FRANCE

[2] UNIV PARIS 06,CNRS,URA 17,PHYS SOLIDE GRP,F-75005 PARIS,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 20期

关键词：

D O I：

10.1063/1.111477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present photorefractive measurements in undoped GaAs performed at 1.06 mum, 1.32/mum, and at 1.55 mum. Using concentrations of EL2(0/+) that we determined through optical absorption and electron paramagnetic resonance measurements in the same sample, we show that a single defect model with an electron-hole competition quantitatively explains our results of photorefractive wave mixing.

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页码：2640 / 2642

页数：3

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共 16 条

[1] THE ELECTROOPTIC COEFFICIENTS OF GAAS - MEASUREMENTS AT 1.32-MU-M AND 1.52-MU-M AND STUDY OF THEIR DISPERSION BETWEEN 0.9-MU-M AND 10-MU-M [J].

BERSETH, CA ;

WUETHRICH, C ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) :2821-2825

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[3] THERMALLY INDUCED HOLE-ELECTRON COMPETITION IN PHOTOREFRACTIVE INP-FE DUE TO THE FE-2+ EXCITED-STATE [J].

DELAYE, P ;

HALTER, PU ;

ROOSEN, G .

APPLIED PHYSICS LETTERS, 1990, 57 (04) :360-362

[4] THE ROLE OF DEEP-LEVEL CENTERS AND COMPENSATION IN PRODUCING SEMI-INSULATING GAAS [J].

JOHNSON, EJ ;

KAFALAS, JA ;

DAVIES, RW .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :204-207

[5] BEAM COUPLING IN UNDOPED GAAS AT 1.06-MU-M USING THE PHOTOREFRACTIVE EFFECT [J].

KLEIN, MB .

OPTICS LETTERS, 1984, 9 (08) :350-352

[6] HOLOGRAPHIC STORAGE IN ELECTROOPTIC CRYSTALS .1. STEADY-STATE [J].

KUKHTAREV, NV ;

MARKOV, VB ;

ODULOV, SG ;

SOSKIN, MS ;

VINETSKII, VL .

FERROELECTRICS, 1979, 22 (3-4) :949-960

[7] GROWTH, SPECTROSCOPIC AND PHOTOREFRACTIVE INVESTIGATION OF VANADIUM-DOPED CADMIUM TELLURIDE [J].

LAUNAY, JC ;

MAZOYER, V ;

TAPIERO, M ;

ZIELINGER, JP ;

GUELLIL, Z ;

DELAYE, P ;

ROOSEN, G .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (01) :33-40

[8] REFRACTIVE INDEX OF GAAS [J].

MARPLE, DTF .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1241-&

[9] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[10] PHOTOREFRACTIVE CHARACTERIZATION OF DEEP LEVEL COMPENSATION IN SEMI-INSULATING GAAS [J].

PARTOVI, A ;

GARMIRE, EM ;

VALLEY, GC ;

KLEIN, MB .

APPLIED PHYSICS LETTERS, 1989, 55 (26) :2701-2703