PHOTOREFRACTIVE CHARACTERIZATION OF DEEP LEVEL COMPENSATION IN SEMI-INSULATING GAAS

被引：18

作者：

PARTOVI, A ^{[1
]}

GARMIRE, EM ^{[1
]}

VALLEY, GC ^{[1
]}

KLEIN, MB ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 26期

关键词：

D O I：

10.1063/1.101929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2701 / 2703

页数：3

共 22 条

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[3]

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[5]

HELMES DE, 1982, APPL PHYS LETT, V40, P46

[6]

HELMES DE, 1983, APPL PHYS LETT, V43, P305

[7]

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[8]

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[9] CARBON IN SEMI-INSULATING, LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HUNTER, AT ;

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WINSTON, HV ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :74-76

[10] LOW-DISLOCATION INDIUM-ALLOYED GAAS [J].

KIMURA, H ;

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