RADIATION-INSENSITIVE SILICON OXYNITRIDE FILMS FOR USE IN SILICON DEVICES .2.

被引：12

作者：

SCHMIDT, PF

ASHNER, JD

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 06期

关键词：

D O I：

10.1109/TNS.1970.4325761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：11 / +

页数：1

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