OPTICAL-ABSORPTION IN SILICON-OXIDE FILM NEAR THE SIO2/SI INTERFACE

被引：7

作者：

HAGA, T

MIYATA, N

MORIKI, K

FUJISAWA, M

KANEOKA, T

HIRAYAMA, M

MATSUKAWA, T

HATTORI, T

机构：

[1] UNIV TOKYO, INST SOLID STATE PHYS, TANASHI, TOKYO 188, JAPAN

[2] MITSUBISHI ELECTR CO, LSI RES & DEV LAB, ITAMI, HYOGO 664, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

OPTICAL ABSORPTION; SILICON OXIDE FILM; VACUUM ULTRAVIOLET; KRAMERS-KRONIG RELATION; INTERFACIAL TRANSITION LAYER;

D O I：

10.1143/JJAP.29.L2398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The contribution of SiO2/Si interface structure to optical absorption below the optical absorption edge of fused quartz was studied by measuring the reflectance of thermally grown ultrathin silicon oxide films. From the modified Kramers-Kronig analysis of reflectance, it was found that optical absorption at the photon energy of 7.8 eV arises from Si-Si bonds in the oxide film within 6 nm of the interface and does not depend on the oxidation temperature. Approximate areal density of Si-Si bond is 7 X 10(14) cm-2.

引用

页码：L2398 / L2400

页数：3

共 6 条

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