GAP SURFACE-BARRIER DIODES

[1] BARTELINK DJ, 16542 TECHN REP SOL

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714

[3] RANGE OF PHOTOEXCITED HOLES IN AU [J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 3 - 5

[4] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 313 - &

[5] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &

[6] HENISCH HK, 1957, RECTIFYING SEMICONDU, P183

[7] HENISCH HK, 1957, RECTIFYING SEMICONDU, P173

[8] HUGHES AL, 1932, PHOTOELECTRIC PHENOM, P241

[9] KAHNG D, 1962, IRE SOLIDSTATE DEVIC

[10] CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1649 - &

[1] BARTELINK DJ, 16542 TECHN REP SOL

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714

[3] RANGE OF PHOTOEXCITED HOLES IN AU [J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 3 - 5

[4] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 313 - &

[5] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &

[6] HENISCH HK, 1957, RECTIFYING SEMICONDU, P183

[7] HENISCH HK, 1957, RECTIFYING SEMICONDU, P173

[8] HUGHES AL, 1932, PHOTOELECTRIC PHENOM, P241

[9] KAHNG D, 1962, IRE SOLIDSTATE DEVIC

[10] CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1649 - &