ELECTRONIC-STRUCTURE OF AMORPHOUS SI1-XGEX-H ALLOYS STUDIED BY SOFT-X-RAY AND PHOTOELECTRON SPECTROSCOPIES

被引:5
作者
CARDINAUD, C [1 ]
SENEMAUD, C [1 ]
VILLELA, G [1 ]
机构
[1] LAB MARCOUSSIS,F-91460 MARCOUSSIS,FRANCE
关键词
D O I
10.1016/S0022-3093(86)80087-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:55 / 65
页数:11
相关论文
共 18 条
[1]   ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS [J].
BULLOT, J ;
GALIN, M ;
GAUTHIER, M ;
BOURDON, B ;
BOURDON, B .
JOURNAL DE PHYSIQUE, 1983, 44 (06) :713-721
[2]  
CARDINAUD C, 1985, THESIS PARIS
[3]   ALLOYING EFFECTS ON THE OPTICAL-ABSORPTION EDGE OF GLOW-DISCHARGE A-SI1-XGEX-H [J].
CHAHED, L ;
SENEMAUD, C ;
THEYE, ML ;
BULLOT, J ;
GALIN, M ;
GAUTHIER, M ;
BOURDON, B ;
TOULEMONDE, M .
SOLID STATE COMMUNICATIONS, 1983, 45 (07) :649-653
[4]   OPTICAL-PROPERTIES OF AMORPHOUS SIXGE1-X(H) ALLOYS PREPARED BY RFGLOW DISCHARGE [J].
CHEVALLIER, J ;
WIEDER, H ;
ONTON, A ;
GUARNIERI, CR .
SOLID STATE COMMUNICATIONS, 1977, 24 (12) :867-869
[5]   DIRECT SPECTROSCOPIC DETERMINATION OF THE DISTRIBUTION OF OCCUPIED GAP STATES IN A-SI-H [J].
GRIEP, S ;
LEY, L .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :253-256
[6]   ELECTRONIC-PROPERTIES OF AMORPHOUS SIXGE1-X-H-FILMS [J].
HAUSCHILDT, D ;
FISCHER, R ;
FUHS, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 102 (02) :563-566
[7]   ELECTRONIC PROPERTIES OF COMPLEX CRYSTALLINE AND AMORPHOUS PHASES OF GE AND SI .1. DENSITY OF STATES AND BAND STRUCTURES [J].
JOANNOPOULOS, JD ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 7 (06) :2644-2657
[8]   X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J].
LEY, L ;
SHIRLEY, DA ;
POLLAK, R ;
KOWALCZYK, S .
PHYSICAL REVIEW LETTERS, 1972, 29 (16) :1088-+
[9]   STATIC CHARGE FLUCTUATIONS IN AMORPHOUS-SILICON [J].
LEY, L ;
REICHARDT, J ;
JOHNSON, RL .
PHYSICAL REVIEW LETTERS, 1982, 49 (22) :1664-1667
[10]   AN XPS STUDY OF SPUTTERED A-SI,GE ALLOYS [J].
LUCOVSKY, G ;
CHAO, SS ;
TYLER, JE ;
DEMAGGIO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :838-844