DOPANT AND CARRIER PROFILING IN MODULATION-DOPED GAAS MULTILAYERS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY

被引：29

作者：

JOHNSON, MB

MEIER, HP

SALEMINK, HWM

机构：

[1] IBM Research Division, Zurich Research Laboratory

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 26期

关键词：

D O I：

10.1063/1.110073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the direct measurement of dopant and carrier density profiles in GaAs (001) modulation-doped structures using cross-sectional scanning tunneling microscopy, On ultrahigh-vacuum-cleaved cross-sectional (110) GaAs surfaces, individual electrically active dopants are observed as hillocks in the top several surface layers, and the tip-sample separation is found to be sensitive to the carrier concentration. In structures where the conventionally measured p-type dopant concentration varied from 1 x 10(18) to 1 x 10(19) cm-3 the density of such dopant hillocks varies accordingly and the tip-sample separation changes by 0.1 nm.

引用

页码：3636 / 3638

页数：3

共 10 条

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[8] STERN F, COMMUNICATION
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