DRIFT MOBILITY MEASUREMENTS IN THIN EPITAXIAL SEMICONDUCTOR LAYERS USING TIME-OF-FLIGHT TECHNIQUES

被引：17

作者：

EVANS, AGR

ROBSON, PN

机构：

[1] UNIV STRATHCLYDE, DEPT NAT PHILOSOPHY, GLASGOW, SCOTLAND

[2] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD, ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 08期

关键词：

D O I：

10.1016/0038-1101(74)90028-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：805 / 812

页数：8

共 9 条

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[3] NEW TIME-OF-FLIGHT TECHNIQUE FOR MEASURING DRIFT VELOCITY IN SEMICONDUCTORS [J].

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[7] TRANSPORT PROPERTIES OF GAAS [J].

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