CARBON-ACCEPTOR PAIR CENTERS (X-CENTERS) IN SILICON

被引：70

作者：

JONES, CE ^{[1
]}

SCHAFER, D ^{[1
]}

SCOTT, W ^{[1
]}

HAGER, RJ ^{[1
]}

机构：

[1] HONEYWELL INC,CTR CORP TECHNOL,BLOOMINGTON,MN 55420

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.329415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5148 / 5158

页数：11

共 28 条

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[4]

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[6]

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[7]

JONES CE, 1979, B AM PHYS SOC, V24, P276

[8] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

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[9]

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