MICROWAVE MEASUREMENT OF SEMICONDUCTOR CARRIER LIFETIMES

被引：15

作者：

ATWATER, HA

机构：

来源：

关键词：

D O I：

10.1063/1.1735726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：938 / 939

页数：2

共 4 条

[1] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[2] MICROWAVE TECHNIQUES IN MEASUREMENT OF LIFETIME IN GERMANIUM
RAMSA, AP
JACOBS, H
BRAND, FA
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) : 1054 - 1060
[3] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[4] TRANSIENT RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS
WERTHEIM, GK
[J]. PHYSICAL REVIEW, 1958, 109 (04): : 1086 - 1091