ATOMIC LAYER EPITAXY OF ALAS USING ETHYLDIMETHYLAMINE ALANE AS A NEW ALUMINUM SOURCE

被引：10

作者：

KANO, N

HIROSE, S

HARA, K

YOSHINO, J

MUNEKATA, H

KUKIMOTO, H

机构：

[1] Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 227

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.112977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic layer epitaxy (ALE) of AlAs layers has been studied with the alternate supplies of ethyldimethylamine alane (EDMAAI) and arsine as aluminum and arsenic sources. Self-limiting growth at either one- or two-monolayer per source supply cycle is clearly observed under the specific growth conditions defined by the substrate temperatures (250-650-degrees-C) and the flow rates of EDMAAI (0.8-1.1 and 1.5-1.7 x 10(-2) sccm). Carbon concentration in the resultant AlAs layers is estimated to be about 10(17)-10(18) cm-3.

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页码：1115 / 1117

页数：3

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