ATOMIC LAYER EPITAXY OF ALAS AND ALGAAS

被引：13

作者：

MEGURO, T

IWAI, S

AOYAGI, Y

OZAKI, K

YAMAMOTO, Y

SUZUKI, T

OKANO, Y

HIRATA, A

机构：

[1] HOSEI UNIV,COLL ENGN,KOGANEI,TOKYO 184,JAPAN

[2] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

[3] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90579-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomic layer epitaxy (ALE) of AlAs and AlGaAs with metalorganic vapor-phase epitaxy (MOVPE) under Ar-ion laser irradiation has been successfully realized in a triethylaluminum (TEA)/AsH3 system for the first time. Comparison with the growth characteristics of MOVPE with alternative feeding modes of TMA/AsH3 and TEA/AsH3 is discussed. Application to laser-ALE of AlGaAs using a triethylgallium (TEG)/TEA/AsH3 system is also discussed. © 1990.

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收藏

页码：540 / 544

页数：5

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