SIMPLE NEGATIVE RESIST FOR DEEP ULTRAVIOLET, ELECTRON-BEAM, AND X-RAY-LITHOGRAPHY

被引:31
作者
STEWART, KJ [1 ]
HATZAKIS, M [1 ]
SHAW, JM [1 ]
SEEGER, DE [1 ]
NEUMANN, E [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584448
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1734 / 1739
页数:6
相关论文
共 22 条
[1]   MOLECULAR-PARAMETERS AND LITHOGRAPHIC PERFORMANCE OF POLY(CHLOROMETHYLSTYRENE) - A HIGH-PERFORMANCE NEGATIVE ELECTRON RESIST [J].
CHOONG, HS ;
KAHN, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1121-1126
[2]   PHOTOINITIATED CATIONIC POLYMERIZATION BY DIALKYLPHENACYLSULFONIUM SALTS [J].
CRIVELLO, JV ;
LAM, JHW .
JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1979, 17 (09) :2877-2892
[3]  
CRIVELLO JV, 1978, UV CURING SCI TECHNO, P23
[4]  
CRIVELLO V, 1984, ACS S SER, V242
[5]  
HATZAKIS M, 1989, UNPUB MICROCIRCUIT E
[6]   EPOXIDE-CONTAINING POLYMERS AS HIGHLY SENSITIVE ELECTRON-BEAM RESISTS [J].
HIRAI, T ;
HATANO, Y ;
NONOGAKI, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :669-&
[7]  
ITO H, 1984, ACS SYM SER, V242, P12
[8]  
LEE H, 1957, EPOXY RESINS
[9]   PGN AS A GOOD DRY ETCHING RESISTANT NEGATIVE ELECTRON-BEAM RESIST [J].
LIN, FY ;
GONG, BM ;
YE, YD ;
KU, CC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :373-376
[10]  
NONAGAKI S, 1974, APPL POLYM S, V23, P117