MOLECULAR-PARAMETERS AND LITHOGRAPHIC PERFORMANCE OF POLY(CHLOROMETHYLSTYRENE) - A HIGH-PERFORMANCE NEGATIVE ELECTRON RESIST

被引：59

作者：

CHOONG, HS

KAHN, FJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1121 / 1126

页数：6

共 19 条

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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1997 - 2002
[6] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY
IMAMURA, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1628 - 1630
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 936 - 940
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