THE CONCEPT OF SCREENING LENGTH IN LIFETIME AND RELAXATION SEMICONDUCTORS

被引：25

作者：

MANIFACIER, JC ^{[1
]}

HENISCH, HK ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1980年 / 41卷 / 11期

关键词：

D O I：

10.1016/0022-3697(80)90166-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1285 / 1288

页数：4

共 12 条

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[9] BULK BOUNDARY-CONDITIONS FOR INJECTION AND EXTRACTION IN TRAP-FREE LIFETIME AND RELAXATION SEMICONDUCTORS [J].

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POPESCU, C .

PHYSICAL REVIEW B, 1978, 17 (10) :3972-3983

[10] TRANSPORT IN RELAXATION SEMICONDUCTORS [J].

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