BULK BOUNDARY-CONDITIONS FOR INJECTION AND EXTRACTION IN TRAP-FREE LIFETIME AND RELAXATION SEMICONDUCTORS

被引：8

作者：

STOICA, T

POPESCU, C

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.17.3972

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3972 / 3983

页数：12

共 11 条

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[8]

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[9] TRANSPORT IN RELAXATION SEMICONDUCTORS [J].

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[10] THEORY OF CURRENT-CARRIER TRANSPORT AND PHOTOCONDUCTIVITY IN SEMICONDUCTORS WITH TRAPPING [J].

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