MINORITY-CARRIER INJECTION IN RELAXATION SEMICONDUCTORS

被引：42

作者：

POPESCU, C

HENISCH, HK

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.11.1563

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1563 / 1568

页数：6

相关论文

共 5 条

[1] CONDUCTION IN RELAXATION-CASE SEMICONDUCTORS
DOHLER, GH
HEYSZENAU, H
[J]. PHYSICAL REVIEW LETTERS, 1973, 30 (24) : 1200 - 1202
[2] TRANSPORT IN RELAXATION SEMICONDUCTORS
KIESS, H
ROSE, A
[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (03) : 153 - 154
[3] CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME
QUEISSER, HJ
CASEY, HC
VANROOSB.W
[J]. PHYSICAL REVIEW LETTERS, 1971, 26 (10) : 551 - &
[4] TRANSPORT IN RELAXATION SEMICONDUCTORS
VANROOSB.W
CASEY, HC
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2154 - &
[5] VANROOSBROECK W, 1970, 10 P INT C PHYS SEM, P832