CONDUCTION IN RELAXATION-CASE SEMICONDUCTORS

被引：20

作者：

DOHLER, GH ^{[1
]}

HEYSZENAU, H ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, STUTTGART 7, WEST GERMANY

来源：

关键词：

D O I：

10.1103/PhysRevLett.30.1200

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1200 / 1202

页数：3

共 7 条

[1] DOHLER GH, TO BE PUBLISHED
[2] FERRO AP, 1972, J APPL PHYS, V40, P4015
[3] KELLER SP, 1970, CONF700801
[4] CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME
QUEISSER, HJ
CASEY, HC
VANROOSB.W
[J]. PHYSICAL REVIEW LETTERS, 1971, 26 (10) : 551 - &
[5] TRANSPORT IN RELAXATION SEMICONDUCTORS
VANROOSB.W
CASEY, HC
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2154 - &
[6] ELECTRONIC BASIS OF SWITCHING IN AMORPHOUS SEMICONDUCTOR ALLOYS
VANROOSBROECK, W
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (17) : 1120 - +
[7] VANROOSBROECK W, 1970, 10 P INT C PHYS SEM