TEMPERATURE DEPENDENCE OF RHS IN ALUMINUM-IMPLANTED LAYER IN N-TYPE SINGLE CRYSTAL SILICON

被引：2

作者：

ITOH, T

INADA, T

ISHIKI, M

MENABE, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 09期

关键词：

D O I：

10.1063/1.1652803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：255 / &

共 13 条

[1]

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[2]

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[8] DOPING OF SILICON BY ION IMPLANTATION [J].

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APPLIED PHYSICS LETTERS, 1968, 12 (08) :244-&

[9] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS [J].

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[10] ION BEAMS AND SOLID STATE PHYSICS [J].

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