VARIATION OF ENERGY GAP IN SUBSTITUTIONAL SEMICONDUCTOR ALLOYS

[21] Lorenz M. R., 1970, Proceedings of the 10th international conference on the physics of semiconductors, P444

[22] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P352

[23] A RELATION BETWEEN THE BINDING ENERGY AND THE BAND-GAP ENERGY IN SEMICONDUCTORS OF DIAMOND OR ZINC-BLENDE STRUCTURE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) : 268 - 273

[24] Mooser E., 1960, PROGRESS SEMICONDUCT, V5, P103

[25] ENERGY LEVELS OF A DISORDERED ALLOY [J]. PHYSICAL REVIEW, 1955, 97 (03): : 587 - 598

[26] ON RELATIONSHIP OF SEMICONDUCTOR COMPOUND PROPERTIES AND AVERAGE HEATS OF ATOMISATION [J]. SOLID-STATE ELECTRONICS, 1965, 8 (06) : 529 - +

[27] SANDERSON RT, 1960, CHEMICAL PERIODICITY

[28] Sirota N.N., 1968, SEMICOND SEMIMET, V4, P35

[29] PREPARATION AND OPTICAL PROPERTIES OF INAS1-XPX ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3280 - &

[30] ENERGY-GAP VARIATION IN MIXED 3-V ALLOYS [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (2P1) : 255 - &

[21] Lorenz M. R., 1970, Proceedings of the 10th international conference on the physics of semiconductors, P444

[22] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P352

[23] A RELATION BETWEEN THE BINDING ENERGY AND THE BAND-GAP ENERGY IN SEMICONDUCTORS OF DIAMOND OR ZINC-BLENDE STRUCTURE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) : 268 - 273

[24] Mooser E., 1960, PROGRESS SEMICONDUCT, V5, P103

[25] ENERGY LEVELS OF A DISORDERED ALLOY [J]. PHYSICAL REVIEW, 1955, 97 (03): : 587 - 598

[26] ON RELATIONSHIP OF SEMICONDUCTOR COMPOUND PROPERTIES AND AVERAGE HEATS OF ATOMISATION [J]. SOLID-STATE ELECTRONICS, 1965, 8 (06) : 529 - +

[27] SANDERSON RT, 1960, CHEMICAL PERIODICITY

[28] Sirota N.N., 1968, SEMICOND SEMIMET, V4, P35

[29] PREPARATION AND OPTICAL PROPERTIES OF INAS1-XPX ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3280 - &

[30] ENERGY-GAP VARIATION IN MIXED 3-V ALLOYS [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (2P1) : 255 - &