SURFACE-REACTIONS OF GE CONTAINING ORGANOMETALLICS ON SI(100)

The adsorption and decomposition of germane GeH4 and digermane Ge2H6 on Si(100) have been investigated. Exposure of GeH4 to Si(100) at 110 K results in dissociative chemisorption to GeH3 and H. The adsorption of GeH4 is via a precursor state. Heating to higher temperatures results in the decomposition of GeH3. H-2 desorption from GeH4 decomposition exhibits two desorption states. One state is dominated by Si and the second state is influenced by Ge on the surface. The preadsorption of Ge strongly alters the desorption of H-2, shifting most of the desorption into the lower temperature state most strongly influenced by Ge. The H-2 thermal desorption from the decomposition of Ge2H6 is examined and is qualitatively similar to that of GeH.