GROWTH OF DEVICE QUALITY GAAS BY CHEMICAL BEAM EPITAXY

被引：13

作者：

CHIU, TH

TSANG, WT

DITZENBERGER, JA

TU, CW

REN, F

WU, CS

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,READING,PA 19604

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 03期

关键词：

D O I：

10.1007/BF02652181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：217 / 221

页数：5

共 11 条

[1] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY
CHIU, TH
TSANG, WT
CUNNINGHAM, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2302 - 2307
[2] CUNNINGHAM J, UNPUB
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND ARSINE
HORIGUCHI, S
KIMURA, K
KAMON, K
MASHITA, M
SHIMAZU, M
MIHARA, M
ISHII, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L979 - L982
[4] KONDO K, 1986, I PHYS C SER, V79, P85
[5] A MASS-SPECTROMETRIC STUDY OF ASH3 AND PH3 GAS SOURCES FOR MOLECULAR-BEAM EPITAXY
PANISH, MB
HAMM, RA
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (03) : 445 - 452
[6] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS
PUTZ, N
HEINECKE, H
HEYEN, M
BALK, P
WEYERS, M
LUTH, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) : 292 - 300
[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE
TOKUMITSU, E
KUDOU, Y
KONAGAI, M
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3163 - 3165
[8] SELECTIVE AREA GROWTH OF GAAS AND IN0.53GA0.47AS EPILAYER STRUCTURES BY CHEMICAL BEAM EPITAXY USING SILICON SHADOW MASKS - A DEMONSTRATION OF THE BEAM NATURE
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 742 - 744
[9] ELIMINATION OF OVAL DEFECTS IN EPILAYERS BY USING CHEMICAL BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1086 - 1088
[10] CHEMICAL BEAM EPITAXY OF INP AND GAAS
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1234 - 1236

← 1 2 →