DENSITY FUNCTIONAL-STUDY OF THE BONDING IN SMALL SILICON CLUSTERS

被引:125
作者
FOURNIER, R
SINNOTT, SB
DEPRISTO, AE
机构
[1] IOWA STATE UNIV SCI & TECHNOL, DEPT CHEM, AMES, IA 50011 USA
[2] IOWA STATE UNIV SCI & TECHNOL, US DOE, AMES LAB, AMES, IA 50011 USA
关键词
D O I
10.1063/1.463918
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the ground electronic state, equilibrium geometry, vibrational frequencies, and binding energy for various isomers of Si(n)(n = 2-8) obtained with the linear combination of atomic orbitals-density functional method. We used both a local density approximation approach and one with gradient corrections. Our local density approximation results concerning the relative stability of electronic states and isomers are in agreement with Hartree-Fock and Moller-Plesset (MP2) calculations [K. Raghavachari and C. M. Rohlfing, J. Chem. Phys. 89, 2219 (1988)]. The binding energies calculated with the gradient corrected functional are in good agreement with experiment (Si2 and Si3) and with the best theoretical estimates. Our analysis of the bonding reveals two limiting modes of bonding and classes of silicon clusters. One class of clusters is characterized by relatively large s atomic populations and a large number of weak bonds, while the other class of clusters is characterized by relatively small s atomic populations and a small number of strong bonds.
引用
收藏
页码:4149 / 4161
页数:13
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